专利名称：Method of Fabricating an Integrated Device发明人：Joshua LU,Gregory BEACH,Alexander
PAYNE,James HUNTER
申请号：US13648932申请日：20121010
公开号：US20130034958A1公开日：20130207
专利附图：
摘要：A method of fabricating an integrated device including a
MicroElectroMechanical system (MEMS) and an associated microcircuit is provided. In oneembodiment, the method comprises: forming a high temperature contact through a
dielectric layer to an underlying element of a microcircuit formed adjacent to a
MicroElectroMechanical System (MEMS) structure on a substrate; and depositing a layerof conducting material over the dielectric layer, and patterning the layer of conductingmaterial to form a local interconnect (LI) for the microcircuit overlying and electricallycoupled to the contact and a bottom electrode for the adjacent MEMS structure. Otherembodiments are also provided.
申请人：Silicon Light Machines Corporation
地址：Sunnyvale CA US
国籍：US
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