POWER SEMICONDUCTOR DEVICES

专利名称：POWER SEMICONDUCTOR DEVICES发明人：MOODY, Paul, Timothy申请号：EP96915117.0申请日：19960531公开号：EP0783766A2公开日：19970716

摘要：A power semiconductor device (e.g. MOSFET or IGBT) has a temperaturesensing means in the form of thin-film sensing element (D1) on a first insulating layer (2)on the device body (10). The sensing element is preferably a reverse-biased p-n junctionthin-film polycrystalline silicon diode (D1). In order to screen the sensitive element (D1)from electrical noise, an electrically conductive layer (4) is present on a secondelectrically insulating layer (5) over the thin-film element (D1) and forms part of anelectrical screen (3, 4) which is present over and under the thin-film element (D1). Thiselectrical screen (3, 4) also comprises a semiconductive region (3) underlying the thin-filmelement (D1), with the overlying conductive layer (4) electrically connected to thesemiconductive region (3) at a window (6) in the insulating layers (2, 5). One electricalconnection of the thin-film element (D1) may be formed by the screening conductivelayer (4) extending through a contact window (46) in the second insulating layer (5) andconnected to a stable reference potential (e.g. ground). The electrical screen (3, 4) can beintegrated around the thin-film element (D1) in the same process steps as are alreadyused for power device fabrication, but with modified mask layouts for providing thedesired geometry in accordance with the invention. The overlying screening conductivelayer (4) may be a main electrode (e.g. source) of the power semiconductor device.

申请人：PHILIPS ELECTRONICS N.V.

地址：Groenewoudseweg 1 5621 BA Eindhoven NL

国籍：NL

代理机构：Stevens, Brian Thomas, et al

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