Method for making silica strain test structures

专利名称：Method for making silica strain test

structures

发明人：Russ Arndt,Susan Cohen,Ronald

Hoyer,Colleen Snavely

申请号：US08/882056申请日：19970625公开号：US05899701A公开日：19990504

摘要：A method for forming silica stain on a substrate to facilitate monitoring of thesilica stain during integrated circuit manufacture. The method includes providing a silicastain test structure which has a silicon substrate, a hydrophilic silicon dioxide containinglayer disposed above the silicon substrate, and a plurality of cavities formed in the siliconsubstrate through the silicon dioxide containing layer. The cavities have hydrophobicsidewalls. The method also includes exposing the silica stain test structure to deionizedwater, and drying the silica stain test structure to form the silica stain on the silicondioxide containing layer.

申请人：SIEMENS AKTIENGESELLSCHAFT,INTERNATIONAL BUSINESS MACHINESCORPORATION

代理人：Stanton C. B raden

更多信息请下载全文后查看