专利名称：Power semiconductor device发明人：Jaroslav Homola,Ladislav Dort,Ladislav
Radvan
申请号：US15216182申请日：20160721公开号：US10079214B2公开日：20180918
专利附图：
摘要：A power semiconductor device is disclosed having a power semiconductorelement with an upper and lower side, the upper side being located opposite to thelower side; a first and second electrode, and a housing, wherein the power semiconductor
element is arranged between the first and second electrode such, that the upper sidecomprises a first contact portion being in contact with the first electrode and a first freeportion not being in contact with the first electrode, and wherein the lower side at leastcomprises a second contact portion being in contact with the second electrode, andwherein a channel is provided fluidly connecting at least a part of the first free portionwith a predetermined degassing point of the housing for guiding an overpressure, whichoverpressure results from plasma and/or gas occurring in a failure mode, from the firstfree portion to the predetermined degassing point.
申请人：ABB Schweiz AG
地址：Baden CH
国籍：CH
代理机构：Taft Stettinius & Hollister LLP
代理人：J. Bruce Schelkopf
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