WAFER PROCESSING PROCEDURES

申请(专利)号： DE102019208940A

1

专利号： DE102019208940A

1 主分类号： H01L21/301

申请权利人： DISCO

CORPORATION 公开国代码： DE 优先权国家： JP

摘 要：

A wafer processing method includes a film joining step of placing a polyolefin or polyester film on a front side of a wafer having a device area in which devices are formed to be separated from dividing lines, the film having a size capable of to cover the device area, and next

performing thermocompression bonding to bond the film to the front side of the wafer, thereby protecting the front of the wafer with the film. The method further includes a test element group (TEG)

cutting step of applying a first laser beam through the film to the wafer along each division line, thereby cutting a TEG

formed on each division line, and forming a modified layer of applying a second laser beam to one Back of the wafer

along each division line, the second laser beam having a transmission wavelength of the wafer, to thereby form a modified layer within the wafer along each division

申请日： 2019-06-19 公开公告日： 2019-12-24

分类号： H01L21/301;

H01L21/78; H01L23/544; H01L21/66 发明设计人： JINYAN ZHAO 申请国代码： DE

优先权： 20180622 JP 2018-119122

摘 要 附 图：

line. 主权项：

Waferbearbeitungsverfahren zum Teilen eines Wafers mit einem Bauelementgebiet an seiner Vorderseite,

权 利 要 求 说 明 书

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说 明 书

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